Persamaan Jenis Transistor AF 1816

History of Clevite TransistorProducts

Jul 30, 2015  The many power transistor specifications that are required in the manufacture of transistors are not necessarily the same specifications required for field technicians. Once the transistorized equipment is designed and used, the technician need only be aware of certain practical and general precautions in the replacement of transistors, that is.

Copyright Mark P D Burgess 2014

Founding in 1952

Transistor Products was incorporated mid1952 in Rahway New Jersey as a new subsidiary of Purolator Products Inc. Abrief announcement advised that a license had been obtained from WesternElectric and that Scientific Specialties Co of Boston would produce specialisedequipment for quality transistor manufacture. [Tele-Tech 1952] Purolator produced an extensive range of fueland oil filters. Their rationale for entering the electronics industry isunclear.

Roland B Holt, its President and formerDirector of the Nuclear Physics Laboratory at Harvard University headed theresearch. Holt owned Scientific Specialties Corp which produced laboratoryequipment. Transistor Products first premises were inBrighton, Boston, Massachusetts.

Its founding tookadvantage of the commercialisation of the transistor following its invention byBell Laboratories. Transistor Products were one of some 35 licensees who hadpaid a one time license fee of $25,000 and who attended a Symposium hosted byBell for eight days in April 1952. The purpose of the Bell Symposium was totransfer Bell’s semiconductor know-how developed over the five year period fromthe end of 1947 when it invented the transistor through to 1952 when it beganto make licenses to its technology available to US and foreign companies.[Burroughs 1953 (1)]

Research and Development was led by Dr RichardJohnston, a recent graduate from Harvard. Mr Ed Quirk, also a Harvard alumnus,had been recruited from Western Electric, Allentown as Production Manager. Mr.Quirk was responsible for organizing and managing all manufacturing andengineering operations for transistors and crystal diodes. [Radio News 1958]

These were key recruitments and together withthe Bell license, formed an unhelpful exclusive dependency on Western Electrictechnology and a fruitful relationship with Harvard University.

Progress by 1953

In his Oral History Dr Neville Fletcher recallsworking for the company in the Summer of 1953. At that time Transistor Productswas producing germanium from germanium dioxide. This was zone refined and usedto grow crystals, including grown junction NPN crystals, for making grownjunction transistors. [Ward 2003]

In 1953 the company was producing point-contacttransistors under its Western Electric license using a case style identical tothe already obsolete Western Electric Type A design. They did, however, claimto produce a superior transistor to those from Western Electric due to theiradvances in forming technology. Transistor Products were endeavouring to findcustomers for their point-contact transistors noting that in order to massproduce them, they would need to move to a product more suited to massproduction. They hoped that bead encapsulation (pioneered by Western Electric)would prove suitable for scaling up production.

Left: Transistor Products Type 2D Point-contact Transistor courtesyR McGarrah

Page from an early brochure byTransistor Products Courtesy Jack Ward

Nine point contacttransistors were advertised in the September edition of Electronics (see below)for applications in “switches, amplifiers or oscillators.”

Amplifier Types

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2A 2B 2D 2E

Switching Types

2C 2F 2G

In addition specialtypes were offered to the standard range. Note that the available data onlycovers seven transistors.Neville Fletcherrecalls:

“As withmost Transistor Products, the point contact transistors were made on a fairly“manual” production line and then were adjusted and had the point contacts“formed” (by discharging a capacitor) at the end. After this, they were tested and sorted intodifferent categories on the basis of breakdown voltage and currentamplification factor. There were, Ithink, three bins for the final product, and the transistors were givendifferent numbers on the basis of their performance. While I was familiar with the production lineat the time, and remember things such as the nice little machine for puttingthe kinks in the point contact wires, I was not personally involved,” [Ward 2003]

Gold Bonded Diodes

In 1953 Transistor Products had a capacity for1000 gold bonded diodes per day and were planning on increasing this to 2000per day. These were all in the form of a plastic bead 3/16ths in diameter. Theyalso produced a high voltage version with two conventional diodes in seriesmounted within a single plastic case. They were not producing hermeticallysealed types.

Above: Transistor Products Gold Bonded Diodes from an EarlyBrochure Courtesy Jack Ward

Junction Transistors in 1953

In 1953 theTransistor Products range was relatively advanced with four junctiontransistors on offer. These were all grown junction types based on Bell grownjunction technology. Transistors of this kind were very difficult to produceand the first commercial junction transistors were alloy junction typespioneered by General Electric and RCA. TransistorProducts reliance on Western Electric’s point contact designs and grownjunction technology stunted their early growth. According to reports at thetime (Burroughs) they knew little about alloy junction transistors and weredismissive of their prospects.

These transistorswere promoted for “audio and low speed switching applications wheredependability, long life and minimum space requirements are important.” Thetransistors were all 'X' or experimental types indicating that thecompany was promoting its products prematurely. The four transistors were:

X-22 X-23 X-27 X-28

Most contemporarylistings mention only the X-22 and the X-23 and the status of the X-27 and X-28is unclear as they are not mentioned in most data books. Transistors havebeen identified from Garner 1953, Turner 1954 and Kristalldioden-und Transistoren. The X-27 and X-28 from Burroughs 1953.

Transistor Products X-23 Courtesy J Ward and JHoppe

Photo Devices

The same year the company made an experimental batch of 50 photo-diodes based onthe Western Electric

Right M1740 photo diode courtesy R McGarrah

The company also made a X-25 grown junction NPNphoto transistor first advertised in September 1953 and described in moredetail in the November Radio Electronics supplement of Radio and TelevisionNews that year.

Report from Radio Electronic Engineering supplementof Radio and Television News November 1953 page 22

Above Transistor Products Journal Advertising inElectronics for September 1953

Transistor Testing Instrument

Transistor productsneeded to produce test instruments for their own use but offered this to otherinterested parties.

They branded theirinstrument the 'Transtester.' It was designed to measure the smallsignal parameters of a transistor at any reasonable set of fixed biasconditions. Despite the price of $2150 it did not offer dynamic testing.

Picture credit: Electronics September 1953

Purchase by Clevite Corporation

Transistor Productshad a relatively short history as an independent company. In 1953 CleviteCorporation purchased 51% of the company with an option to purchase 100%. [Radioand Television News 1953, Burroughs1953 (1)]

Clevite Corporationwas founded in 1919 as an engineering company and during the World War II hadproduced bearings for the aviation industry. Post War they sought to diversifyinto electronics and began with the acquisition of Brush Development Corp in1952. Brush was also one of the first companies to obtain a Bell transistorlicense.

Power Transistors 1953-1955

The history of thedevelopment of Transistor Products’ power transistors has been extensivelydescribed by Joe Knight at the Transistor Museum site [Knight 2007].

Work on power transistors was initiated byNeville Fletcher who worked at the company while undertaking his PhD at HarvardUniversity on the theory ofenergy levels in semiconductors. His oral history has beenrecorded by Jack Ward [Ward 2003]. He began at Transistor Products in thesummer vacation of 1953:

“As myvacation project, I decided to try and develop a power transistor using afairly intuitive approach. There was just Shockley’s Book Electrons and Holesin Semiconductors and a few manuals that the company had from Bell Labs butotherwise you went on your general understanding and feelings. The transistorthat I made that eventually became the X-78 actually during that vacation hadan output of rather more than one watt which was ten times higher than any ofthe smaller alloy transistors that you could get in those days.”

Early versions of the X-78 courtesy Joe Knight

Somewhat in the style of the times theprototype was quickly advertised early in 1954 through advertising in the Januaryedition of Electronics as shown below. Neville Fletcher confirmed therelatively fast track to marketing the new device: “The “X” means “experimental” and the “78” doesn’t mean anything! The shapeof the mounting is rather fortuitous, as I simply made the original from scrapmetal and the people in the drawing prettied it up without changing anythingmuch. As I recall, the transistor mount was later redesigned in a better mannerand the transistor itself was surrounded by bent copper-sheet cooling fins.” [Ward 2003]

Transistor Products advertising for the new x-78 in the January 1954 edition of Electronics

Editorial in theJune 1954 edition of Electronics identified this transistor as the X-78 a pnpalloy junction type for use in Class B audio output amplifiers requiring anoutput of 2 watts. Matched pairs of transistors were available for thispurpose. The X-78 was a conventional alloy junctionstructure of the kind first developed by John Saby at General Electric.

According to Fletcher, “making alloyjunction transistors in those days was a pretty simple operation. You worked atrelatively large dimensions…half a millimetre up to a few millimetres. All theelectrodes were shaped by placing indium or tin, whatever the thing was, in theslots in a milled graphite electrode, putting the whole thing in somethingrather like a chemistry department muffle furnace, cooking it for just theright sort of time: you had to get that right because you were dissolving theemitter in from one side, collector in from the other side and you aimed tostop with only a couple of thousandths of an inch between them. That was onecrucial part of the actual process.” [Ward 2003] Enfermagem medico cirurgico pdf to doc.

Transistor types: (left to right) X-78 standard powertransistor (without base electrode); (2) single-bar-transistor; (3) double-bartransistor; (4) multi-bar transistor. The upper row shows the emitter-base sideof the transistors and the lower row the collector side. [Fletcher 1955]

Fletcher worked part time at Transistor Products untilSeptember 1955 when he returned to Australia. During this time he developed thetheory and practice of alloy junction power transistors and in particular theinter-digitated design where the emitter was formed into a bar or comb likestructure with the base connection as interlacing fingers. Collector dissipation of up to 100 watts waspossible by increasing the area of the collector in combination with coolingfins of varying scale. An example of adouble bar structure is shown on the right (courtesy J Knight).

An alternative structure had been published in 1952 byRobert Hall working at General Electric. In his approach, the collector andemitter were constructed in an inter-digitated geometry both on the same sideof the germanium die which served as the base. [Hall 1952]

The work done by Fletcher in commercialising these designsearned him the title “the father of the inter-digitated transistor” in anarticle published in Electronics entitled “Solid State-fingers in the die.”[Tatum 1968]

Work on power transistors was funded by the Signal CorpsEngineering Labs for applications to replace vibrator and dynamotor type powersupplies. [Tele-Tech 1955]

Range in 1954

This is bestdescribed in journal advertising for this year in the March and April editionsof Electronics. This shows considerable development of the diodes range butnothing new in transistors.

Transistors for 1955

Late in 1955 Clevitecompleted its purchase of Transistor Products.

By mid 1955Clevite also completed its purchase of Intermetall, Dusseldorf, Germany. Clevitehad engaged with Intermetall since late 1954 undertaking due diligence on theirsemiconductor devices manufacturing capability. Part of this process was theevaluation of Intermetall’s OC33 and OC34 low powered alloy junctiontransistors which were under development in Dusseldorf.

By early 1955 Intermetall were able to mass produce theOC33 and OC34 transistors in small volumes although the earliest public recordof this appears to be in May of that year. [Burgess & Gebert 2015]

At this time Clevite did not have comparable low power AFpnp junction transistors thus Intermetall technology was attractive. The USAmarket offered opportunities for transistors of this type in portable radios.Accordingly Clevite closed a deal on Intermetall and qucickly added the OC33and OC34 to the Transistor Products range. The acquisition ofIntermetall closed a serious gap in the Clevite product range and reduced theirdependency on Bell Laboratories.

“Clevite Corporation of Cleveland has purchased Intermetall GmbH ofDusseldorf , Germany, the second largest company in Europe engaged in thedevelopment and manufacture of transistors and diodes. The German firm will beoperated in conjunction with the parent company’s Transistor Products Incsubsidiary in Waltham Mass. The Waltham division's corporate name is beingchanged to Clevite Transistor Products.” [Radio andTelevision News 1956]

2A 2C 2D 2E 2G 2H

2N32 2N33 2N50 2N51 2N52 2N53

Junction Types

Power Types

X102 X107 X120 X122 X125

Picture, courtesy ofJoe Knight showing an internal view of a X-107 power type with its cooling finsremoved

Transistors for 1956

In December of 1956Electronic Industries and Tele-Tech published a '1957' chart oftransistor specifications.

This shows that therationalisation of the product ranges of Transistor Products and Intermetallwas complete and the 'experimental' designation had beendropped. The transistors were now branded CTP or carried JEDEC “2N” typenumbers. The range now included silicon transistors developed by Intermetal.

New Silicon Types(Intermetall)

The 2N260, 2N260A,2N261, 2N262, 2N262A are the Intermetall types OC43, OC44, OC45, OC46, OC47.These Intermetall types were subsequently renamed OC430, OC440, OC450, OC460,OC470 to avoid duplication of the type numbers used by other Europeanproducers. [Gebert 2014]

Germanium Range

References

Burgess M Gebert W 2015 History ofIntermetall Semiconductors Radio Museum

Burroughs 1953 (1) TechnicalMemorandum Trip Report: TransistorProducts March 9^th 1953 courtesyBurroughs Corporation Collection of the Charles Babbage Institute

Burroughs 1953 (2) Study of TransistorCharacteristics Progress Report 17 March 30^th 1953 courtesy Burroughs Corporation Collection of the Charles Babbage Institute

Burroughs 1953 (3)Study of Transistor Characteristics Report R-16 August 17 1953 ResearchDivision of Burroughs Adding Machine Company courtesy Burroughs Corporation Collection of the Charles Babbage Institute

Electronics DesignSeptember 1953

ElectronicIndustries 1956 Electronic Industries 1957 Transistor Specifications Electronic Industries and Tele-Tech 15 12 53-8

Fletcher N 1955 Some Aspects of the Design of Power Transistors Proc IRE 43, 551-59

Garner L E 1953 Transistors,Their Practical Application Coyne Chicago Illinois

Gebert W 2014 The first German Silicon Transistors RadioMuseum Forum

Hall R 1952 Power Rectifiers andTransistors Proc. IRE 401512-18

Knight J 2007 A Survey of Early Power TransistorsTransistorProducts Inc Germanium Power Transistors

Kristalldioden- und Transistoren Taschen-Tabelle4th Ed. 1963

Philco Transistor Data Manual 1954

Powers D1951The Present Status ofTransistors and TransistorApplicationsOctober 1, 1951

Radio and TelevisionNews May 1953 p24

Radio and Television News 1956February 164

Radio and TelevisionNews 1958 Within the Industry April 1958 121

Tatum J 1968 Solid State-fingers in the die Electronics February 94

Tele-Tech 1952 Tele-Tips June 10

Tele-Tech 1955 Radarscope May 1955 66

Tele-Tech andElectronic Industries 1955 Transistor Specification Chart September 1955 1-7

Turner 1954Transistors Theory and Practice Gernsback Library Inc

WardJ 2003 Oral History of Neville Fletcher Early GermaniumPowerTransistor Development

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